Siddharth Rajan Thesis

Lodha, “Contacts on n-type Germanium using variably doped Zn O and highly doped ITO interfacial layers”, Applied Physics Express, vol. Lodha, “Enhanced Ge n /p Junction Performance Using Cryogenic Phosphorous Implantation”, IEEE Transactions on Electron Devices 62 (1),69 (2015).

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Lodha “Accurate Threshold Voltage Reliability Evaluation of Thin Al Top Gate Dielectric Black Phosphorous FETs Using Ultrafast Measurement Pulses”, in ACS Applied Materials and Interfaces, 11, 26, 23673-23680, 2019.

Rajan, “Breakdown characteristics of β-(Al field-plated modulation doped field effect transistors with Si Nx passivation”, IEEE Electron Device Letters, 40 (8), 1241-1244, 2019.

Deb, “Janus Nanoparticles for Contrast Enhancement of T1-T2 Dual Mode Magnetic Resonance Imaging”, Dalton Transactions, 48 (3), 1075-1083, 2019.

Deb, “Solvent evaporation driven entrapment of magnetic nanoparticles in mesoporous frame for designing a highly efficient MRI contrast probe”, Applied Surface Science, 464, 567-576 (2018).

Ganguly, “Electrical-equivalent van der Waals gap for two-dimensional bilayers”, to appear in Physical Review Applied, (2018).

Lodha, “Performance Projections for Two-dimensional Materials in Radio-Frequency Applications” Physical Review Applied, 10 (1), 014022, (2018).

606, Nanoelectronics Building, 6th Floor Department of Electrical Engineering IIT Bombay, Powai Mumbai 400 076, India Email : slodha[AT]Phone (Office): 7460 Fax: 91 22 2572 3707 and MIS Contacts”, to appear in IEEE Transactions on Electron Devices, 2019.

Balakrishnan”Selective oxidation of WS2 defect domain with sub monolayer thickness leads to multi-fold enhancement in Photoluminescence” to appear in Advanced Material Interfaces, 2019.

Lodha, “Exciton Emission Intensity Modulation of Monolayer Mo S2 via Au Plasmon Coupling” Scientific Reports, 7, 41175 (2017).

Lodha, “Thickness Tunable Transport in Alloyed WSSe Field Effect Transistors”, Applied Physics Letters, 109, 142101 (2016) Link 28.


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